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Model of random telegraph noise in gate-induced drain leakage current of high-k gate dielectric metal-oxide-semiconductor field-effect transistors

✍ Scribed by Lee, Ju-Wan; Lee, Jong-Ho

Book ID: 111857987
Publisher: American Institute of Physics
Year: 2012
Tongue: English
Weight: 946 KB
Volume: 100
Category: Article
ISSN: 0003-6951
DOI: 10.1063/1.3678023

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