✦ LIBER ✦
Extraction of trap energy and location from random telegraph noise in gate leakage current (Ig RTN) of metal–oxide semiconductor field effect transistor (MOSFET)
✍ Scribed by Heung-Jae Cho; Sanghoon Lee; Byung-Gook Park; Hyungcheol Shin
- Book ID
- 108271777
- Publisher
- Elsevier Science
- Year
- 2010
- Tongue
- English
- Weight
- 584 KB
- Volume
- 54
- Category
- Article
- ISSN
- 0038-1101
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