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Investigation of Random Telegraph Noise in Gate-Induced Drain Leakage and Gate Edge Direct Tunneling Currents of High- MOSFETs

โœ Scribed by Ju-Wan Lee; Byoung Hun Lee; Hyungcheol Shin; Jong-Ho Lee


Book ID
114619937
Publisher
IEEE
Year
2010
Tongue
English
Weight
763 KB
Volume
57
Category
Article
ISSN
0018-9383

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