Characterization of an Oxide Trap Leading to Random Telegraph Noise in Gate-Induced Drain Leakage Current of DRAM Cell Transistors

✍ Scribed by Byoungchan Oh; Heung-Jae Cho; Heesang Kim; Younghwan Son; Taewook Kang; Sunyoung Park; Seunghyun Jang; Jong-Ho Lee; Hyungcheol Shin

• Book ID: 114620445
• Publisher: IEEE
• Year: 2011
• Tongue: English
• Weight: 690 KB
• Volume: 58
• Category: Article
• ISSN: 0018-9383
• DOI: 10.1109/ted.2011.2126046