Characterization and modeling of edge direct tunneling (EDT) leakage in ultrathin gate oxide MOSFETs

✍ Scribed by Yang, K.N.; Huang, H.T.; Chen, M.J.; Lin, Y.M.; Yu, M.C.; Jang, S.M.; Yu, D.C.H.; Liang, M.S.

• Book ID: 114538696
• Publisher: IEEE
• Year: 2001
• Tongue: English
• Weight: 184 KB
• Volume: 48
• Category: Article
• ISSN: 0018-9383
• DOI: 10.1109/16.925242