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Model and analysis of gate leakage current in ultrathin nitrided oxide MOSFETs

โœ Scribed by Jonghwan Lee; Bosman, G.; Green, K.R.; Ladwig, D.


Book ID
114616775
Publisher
IEEE
Year
2002
Tongue
English
Weight
406 KB
Volume
49
Category
Article
ISSN
0018-9383

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