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Impact of interface traps on gate-induced drain leakage current in n -type metal oxide semiconductor field effect transistor

✍ Scribed by Touhami *, A.; Bouhdada, A.

Book ID: 126523152
Publisher: Taylor and Francis Group
Year: 2005
Tongue: English
Weight: 357 KB
Volume: 92
Category: Article
ISSN: 0020-7217
DOI: 10.1080/00207210500092677

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