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Effect of Interface Traps and Oxide Charge on Drain Current Degradation in Tunneling Field-Effect Transistors

✍ Scribed by Huang, X Y; Jiao, G F; Cao, W; Huang, D; Yu, H Y; Chen, Z X; Singh, N; Lo, G Q; Kwong, D L; Ming-Fu Li,

No coin nor oath required. For personal study only.

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