✦ LIBER ✦

Energy position of the active near-interface traps in metal–oxide–semiconductor field-effect transistors on 4H–SiC

✍ Scribed by Haasmann, D.; Dimitrijev, S.

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Extraction of SiO2/SiC interface trap pr

✍ Yanqing Deng; Wei Wang; Qizhi Fang; Mahalingam B. Koushik; T. Paul Chow 📂 Article 📅 2006 🏛 Springer US 🌐 English ⚖ 147 KB

Influence of Si3N4passivation on surface

✍ Ho-Young Cha; Y. C. Choi; R. M. Thompson; V. Kaper; J. R. Shealy; L. F. Eastman; 📂 Article 📅 2004 🏛 Springer US 🌐 English ⚖ 104 KB

Limiting mechanism of inversion channel

✍ Frazzetto, A.; Giannazzo, F.; Fiorenza, P.; Raineri, V.; Roccaforte, F. 📂 Article 📅 2011 🏛 American Institute of Physics 🌐 English ⚖ 729 KB

Impact of interface traps on gate-induce

✍ Touhami *, A.; Bouhdada, A. 📂 Article 📅 2005 🏛 Taylor and Francis Group 🌐 English ⚖ 357 KB

Effect of interface traps related to mob

✍ J.G. Hwu; C.M. Lin; W.S. Wang 📂 Article 📅 1986 🏛 Elsevier Science 🌐 English ⚖ 555 KB

Lateral Nonuniformity Effects of Border

✍ Jen-Chou Tseng; Jenn-Gwo Hwu 📂 Article 📅 2008 🏛 IEEE 🌐 English ⚖ 339 KB