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Influence of Si3N4passivation on surface trapping in SiC metal-semiconductor field-effect transistors

✍ Scribed by Ho-Young Cha; Y. C. Choi; R. M. Thompson; V. Kaper; J. R. Shealy; L. F. Eastman; M. G. Spencer

Book ID
107453260
Publisher
Springer US
Year
2004
Tongue
English
Weight
104 KB
Volume
33
Category
Article
ISSN
0361-5235

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Inversion layer electron transport in 4H
Inversion layer electron transport in 4H-SiC metal-oxide-semiconductor field-effect transistors
✍ Tilak, Vinayak πŸ“‚ Article πŸ“… 2009 πŸ› John Wiley and Sons 🌐 English βš– 491 KB

## Abstract Silicon carbide is the only compound semiconductor with silicon dioxide as its native oxide and can form metal–oxide–semiconductor field‐effect transistors. In this article, we review the inversion layer electron transport properties of 4H‐SiC/SiO~2~. The inversion layer electron transp