✦ LIBER ✦
Influence of dual-frequency plasma-enhanced chemical-vapor deposition Si3N4passivation on the electrical characteristics of AlGaN/GaN heterostructure field-effect transistors
✍ Scribed by W. S. Tan; P. A. Houston; G. Hill; R. J. Airey; P. J. Parbook
- Book ID
- 107453235
- Publisher
- Springer US
- Year
- 2004
- Tongue
- English
- Weight
- 156 KB
- Volume
- 33
- Category
- Article
- ISSN
- 0361-5235
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