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Influence of 4H-SiC semi-insulating substrate purity on SiC metal-semiconductor field-effect transistor performance

✍ Scribed by A. P. Zhang; L. B. Rowland; E. B. Kaminsky; J. B. Tucker; R. A. Beaupre; J. W. Kretchmer; J. L. Garrett; A. Vertiatchikh; G. Koley; H. Y. Cha; A. F. Allen; J. Cook; J. Foppes; B. J. Edward

Book ID: 107453039
Publisher: Springer US
Year: 2003
Tongue: English
Weight: 787 KB
Volume: 32
Category: Article
ISSN: 0361-5235
DOI: 10.1007/s11664-003-0174-3

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