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High-quality schottky and ohmic contacts in planar 4H-SiC metal semiconductor field-effect transistors and device performance

✍ Scribed by Hoonjoo Na; Hyeongjoon Kim; Kazuhiro Adachi; Norihiko Kiritani; Satoshi Tanimoto; Hideyo Okushi; Kazuo Arai

Book ID: 107453286
Publisher: Springer US
Year: 2004
Tongue: English
Weight: 110 KB
Volume: 33
Category: Article
ISSN: 0361-5235
DOI: 10.1007/s11664-004-0275-7

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