Pd/Ge ohmic contacts for GaAs metal-semiconductor field effect transistors: Technology and performance

Analytical performance evaluation of AlG

Analytical performance evaluation of AlGaN/GaN metal insulator semiconductor heterostructure field effect transistor and its comparison with conventional HFETs for high power microwave applications

✍ Ruchika Aggarwal; Anju Agrawal; Mridula Gupta; R. S. Gupta 📂 Article 📅 2008 🏛 John Wiley and Sons 🌐 English ⚖ 475 KB

## Abstract In this work, a comprehensive analytical model for AlGaN/GaN MISHFET has been presented to evaluate the drain current characteristics, transconductance, and cut‐off frequency of the insulated device. The model takes into account polynomial dependence of sheet carrier density on position