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Influence of low-field-mobility-related issues on SiC metal-semiconductor field-effect transistor performance

✍ Scribed by Ho-Young Cha; Y. C. Choi; L. F. Eastman; M. G. Spencer; L. Ardaravicius; A. Matulionis; O. Kiprijanovic

Book ID
107453397
Publisher
Springer US
Year
2005
Tongue
English
Weight
351 KB
Volume
34
Category
Article
ISSN
0361-5235

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In pentacene-based bottom-contact field-effect transistors we study the influence of source and drain contact metals (gold, palladium, and platinum) on the morphology and transistor performance. Transistors prepared with Pd electrodes show a reduced contact and sheet resistance, a reduced activation