Energy band structure of quantum-size me
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Y. Fu; M. Karlsteen; M. Willander
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Article
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1997
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Elsevier Science
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English
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We have investigated the energy band structure of the 40 nm gate length n-metal-oxidesemiconductor field effect transistor (MOSFET) recently fabricated by M. Ono, M. Saito, T. Yoshitomi, C. Fiegna, T. Ohguro and H. Iwai (IEEE Transaction on Electron Devices 42: 1822 (1995)). By the classical particl