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Effects of quantum coupling on the performance of metal-oxide-semiconductor field transistors

โœ Scribed by Ling-Feng Mao


Book ID
107588546
Publisher
Springer-Verlag
Year
2009
Tongue
English
Weight
416 KB
Volume
72
Category
Article
ISSN
0304-4289

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We have investigated the energy band structure of the 40 nm gate length n-metal-oxidesemiconductor field effect transistor (MOSFET) recently fabricated by M. Ono, M. Saito, T. Yoshitomi, C. Fiegna, T. Ohguro and H. Iwai (IEEE Transaction on Electron Devices 42: 1822 (1995)). By the classical particl