Wave function penetration effects in double gate metal-oxide-semiconductor field-effect-transistors: impact on ballistic drain current with device scaling

✍ Scribed by Khan, Asif Islam; Ashraf, Md. Khalid; Haque, Anisul

• Book ID: 121699822
• Publisher: American Institute of Physics
• Year: 2009
• Tongue: English
• Weight: 309 KB
• Volume: 105
• Category: Article
• ISSN: 0021-8979
• DOI: 10.1063/1.3079518