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Channel length scaling and the impact of metal gate work function on the performance of double gate-metal oxide semiconductor field-effect transistors

✍ Scribed by D. Rechem; S. Latreche; C. Gontrand

Book ID: 107588562
Publisher: Springer-Verlag
Year: 2009
Tongue: English
Weight: 568 KB
Volume: 72
Category: Article
ISSN: 0304-4289
DOI: 10.1007/s12043-009-0052-5

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