✦ LIBER ✦

Modelling the effects of piezoelectrically active defects and their impact on the threshold voltage of GaAs metal-semiconductor field effect transistors

✍ Scribed by A. Baric; Patrick J. McNally; J.Kilian McCaffrey

Publisher: Elsevier Science
Year: 1994
Tongue: English
Weight: 368 KB
Volume: 28
Category: Article
ISSN: 0921-5107
DOI: 10.1016/0921-5107(94)90057-4

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Study on the accumulated impurities at t

Study on the accumulated impurities at the epilayer/substrate interface and their influence on the leakage current of metal-semiconductor-field effect transistors

✍ Shigekazu Izumi; Naoto Yoshida; Hirozo Takano; Kazuo Nishitani; Mutsuyuki Otsubo 📂 Article 📅 1993 🏛 Elsevier Science 🌐 English ⚖ 729 KB

Hydrogen and hot electron defect creatio

Hydrogen and hot electron defect creation at the Si(100)/SiO2interface of metal-oxide-semiconductor field effect transistors

✍ Blair R. Tuttle; William McMahon; Karl Hess 📂 Article 📅 2000 🏛 Elsevier Science 🌐 English ⚖ 82 KB

We explore the hydrogen-related microstructures involved in hot electron defect creation at the Si(100)-SiO 2 interface of metal-oxide-semiconductor field effect transistors. With ab initio density functional calculations, the energetics and defect levels have been calculated for hydrogen in bulk si

Analysis of planar channeling effects on

Analysis of planar channeling effects on the threshold voltage uniformity of GaAs metal-semiconductor field-effect transistors using stereographic projection : H MIKAMI, N UCHITOMI, N TOYODA (VLSI Res. Center, Toshiba Corp., Kawasaki, Japan) J. Appl. Phys. (USA), vol. 64, no. 2, pp. 610–613 (15 July 1988)

📂 Article 📅 1989 🏛 Elsevier Science 🌐 English ⚖ 103 KB

Electrical properties of CdTe metal-semi

Electrical properties of CdTe metal-semiconductor field effect transistors : D I DREIFUS, R M KOLBAS (Dept. of Electr. & Comput. Eng., North Carolina State Univ., Raleigh, NC, USA), J R TASSITINO, R L HARPER, R N BICKNELL, J F SCHETZINA J. Vac. Sci. Technol. A. Vac. Surf. Films (USA), vol. 6, no. 4, pp. 2722–2724 (July–Aug. 1988). (1987 U.S. Workshop on the Physics and Chemistry of Mercury Cadmium Telluride, New Orleans, LA, USA, 6–8 Oct. 1987)

📂 Article 📅 1989 🏛 Elsevier Science 🌐 English ⚖ 103 KB