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Analysis of planar channeling effects on the threshold voltage uniformity of GaAs metal-semiconductor field-effect transistors using stereographic projection : H MIKAMI, N UCHITOMI, N TOYODA (VLSI Res. Center, Toshiba Corp., Kawasaki, Japan) J. Appl. Phys. (USA), vol. 64, no. 2, pp. 610–613 (15 July 1988)


Publisher
Elsevier Science
Year
1989
Tongue
English
Weight
103 KB
Volume
20
Category
Article
ISSN
0026-2692

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