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Suppression of ambipolar behavior in metallic source/drain metal-oxide-semiconductor field-effect transistors

✍ Scribed by Ghoneim, H.; Knoch, J.; Riel, H.; Webb, D.; BjoÌrk, M. T.; Karg, S.; LoÌrtscher, E.; Schmid, H.; Riess, W.

Book ID: 120586084
Publisher: American Institute of Physics
Year: 2009
Tongue: English
Weight: 435 KB
Volume: 95
Category: Article
ISSN: 0003-6951
DOI: 10.1063/1.3266526

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