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Sub-40 nm PtSi Schottky source/drain metalâoxideâsemiconductor field-effect transistors

✍ Scribed by Wang, C.; Snyder, John P.; Tucker, J. R.

Book ID: 120009828
Publisher: American Institute of Physics
Year: 1999
Tongue: English
Weight: 847 KB
Volume: 74
Category: Article
ISSN: 0003-6951
DOI: 10.1063/1.123477

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