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Formation of shallow source/drain extensions for metalâoxideâsemiconductor field-effect-transistors by antimony implantation

✍ Scribed by RuÌcker, H.; Heinemann, B.; Barth, R.; Bolze, D.; Melnik, V.; KruÌger, D.; Kurps, R.

No coin nor oath required. For personal study only.

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Formation of shallow source/drain extensions for metalâoxideâsemiconductor field-effect-transistors by antimony implantation