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Formation of erbium-silicide as source and drain for decananometer-scale Schottky barrier metal-oxide-semiconductor field-effect transistors

✍ Scribed by Moongyu Jang; Yarkyeon Kim; Jaeheon Shin; Seongjae Lee


Publisher
Elsevier Science
Year
2004
Tongue
English
Weight
145 KB
Volume
114-115
Category
Article
ISSN
0921-5107

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