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Parasitic Resistance Considerations of Using Elevated Source/Drain Technology for Deep Submicron Metal Oxide Semiconductor Field Effect Transistors

✍ Scribed by Sun, J.

Book ID: 118743322
Publisher: The Electrochemical Society
Year: 1998
Tongue: English
Weight: 668 KB
Volume: 145
Category: Article
ISSN: 0013-4651
DOI: 10.1149/1.1838607

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