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Comparison of Ohmic contact resistances of n- and p-type Ge source/drain and their impact on transport characteristics of Ge metal oxide semiconductor field effect transistors

✍ Scribed by Jungwoo Oh; Jeff Huang; Yen-Ting Chen; Injo Ok; Kanghoon Jeon; Se-Hoon Lee; Barry Sassman; Wei-Yip Loh; Hi-Deok Lee; Dea-Hong Ko; Prashant Majhi; Paul Kirsch; Raj Jammy

Book ID: 113937094
Publisher: Elsevier Science
Year: 2011
Tongue: English
Weight: 541 KB
Volume: 520
Category: Article
ISSN: 0040-6090
DOI: 10.1016/j.tsf.2011.06.025

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