Electron mobility characteristics of n-channel metal-oxide-semiconductor field-effect transistors fabricated on Ge-rich single- and dual-channel SiGe heterostructures

✍ Scribed by Lee, Minjoo L.

• Book ID: 120586075
• Publisher: American Institute of Physics
• Year: 2004
• Tongue: English
• Weight: 354 KB
• Volume: 95
• Category: Article
• ISSN: 0021-8979
• DOI: 10.1063/1.1638610