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Low-Temperature Behaviors of Phonon-Limited Electron Mobility of Sub-10-nm-Thick Silicon-on-Insulator Metal–Oxide–Semiconductor Field-Effect Transistor with (001) and (111) Si Surface Channels

✍ Scribed by Omura, Yasuhisa; Yamamura, Tsuyoshi; Sato, Shingo


Book ID
120013680
Publisher
Institute of Pure and Applied Physics
Year
2009
Tongue
English
Weight
312 KB
Volume
48
Category
Article
ISSN
0021-4922

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