✦ LIBER ✦
Deep-submicron drain current to radio frequency silicon on insulator metal oxide semiconductor field-effect transistor macromodel for designing microwave circuits
✍ Scribed by Benjamin Iñíguez; Jean-Pierre Raskin
- Publisher
- John Wiley and Sons
- Year
- 2002
- Tongue
- English
- Weight
- 333 KB
- Volume
- 12
- Category
- Article
- ISSN
- 1096-4290
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✦ Synopsis
A submicron radio frequency (RF) fully depleted silicon on insulator (SOI) metal oxide semiconductor field-effect transistor (MOSFET) macromodel based on a complete extrinsic small-signal equivalent circuit and an improved computer-aided design model for the intrinsic device is presented. Because the intrinsic device model is charge based, our RF SOI MOSFET model can be used in both small-and large-signal analyses. The present analytical model is used for successfully designing microwave oscillators at 5.8 and 12 GHz in deepsubmicron SOI complementary metal oxide semiconductor technology.