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Nickel Schottky junction on epi-Ge for strained Ge metal–oxide–semiconductor field-effect transistors source/drain engineering

✍ Scribed by M.H. Lee; B.-F. Hsieh; S.T. Chang; S.W. Lee

Book ID: 113937368
Publisher: Elsevier Science
Year: 2012
Tongue: English
Weight: 570 KB
Volume: 520
Category: Article
ISSN: 0040-6090
DOI: 10.1016/j.tsf.2011.10.083

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