Generation of uniaxial tensile strain of over 1% on a Ge substrate for short-channel strained Ge n-type Metal–Insulator–Semiconductor Field-Effect Transistors with SiGe stressors

✍ Scribed by Yoshihiko Moriyama; Yuuichi Kamimuta; Keiji Ikeda; Tsutomu Tezuka

• Book ID: 113937370
• Publisher: Elsevier Science
• Year: 2012
• Tongue: English
• Weight: 700 KB
• Volume: 520
• Category: Article
• ISSN: 0040-6090
• DOI: 10.1016/j.tsf.2011.10.085