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Inversion layer carrier mobility in metal–oxide–semiconductor devices

✍ Scribed by Hsing, C. T. ;Kennedy, D. ;Van Vliet, K. M. ;Sutherland, A. D.


Book ID
105374386
Publisher
John Wiley and Sons
Year
1980
Tongue
English
Weight
382 KB
Volume
57
Category
Article
ISSN
0031-8965

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Inversion layer electron transport in 4H
✍ Tilak, Vinayak 📂 Article 📅 2009 🏛 John Wiley and Sons 🌐 English ⚖ 491 KB

## Abstract Silicon carbide is the only compound semiconductor with silicon dioxide as its native oxide and can form metal–oxide–semiconductor field‐effect transistors. In this article, we review the inversion layer electron transport properties of 4H‐SiC/SiO~2~. The inversion layer electron transp