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Carrier transport modelling in the inversion layer of submicron semiconductor devices

✍ Scribed by Sala, Cristiano ;Magnus, Wim ;De Meyer, Kristin


Book ID
112089435
Publisher
John Wiley and Sons
Year
1990
Tongue
English
Weight
456 KB
Volume
1
Category
Article
ISSN
1124-318X

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Within the next decade or so, it is expected that gate lengths will shrink to 50 nm or less in devices found in integrated circuits. At the same time, the thermal de Broglie wavelength for electrons in Si at 300 K is some 5 nm. How might we expect quantum mechanics to arise in the transport through