✦ LIBER ✦

Self-consistent calculations of inversion-layer mobility in highly doped silicon-on-insulator metalâoxideâsemiconductor field-effect transistors

✍ Scribed by Iwata, Hideyuki

Book ID: 120539851
Publisher: American Institute of Physics
Year: 2001
Tongue: English
Weight: 323 KB
Volume: 90
Category: Article
ISSN: 0021-8979
DOI: 10.1063/1.1378329

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Inversion layer carrier concentration an

Inversion layer carrier concentration and mobility in 4HâSiC metal-oxide-semiconductor field-effect transistors

✍ Dhar, S.; Haney, S.; Cheng, L.; Ryu, S.-R.; Agarwal, A. K.; Yu, L. C.; Cheung, K 📂 Article 📅 2010 🏛 American Institute of Physics 🌐 English ⚖ 619 KB

Mobility enhancement effect in heavily d

Mobility enhancement effect in heavily doped junctionless nanowire silicon-on-insulator metal-oxide-semiconductor field-effect transistors

✍ Rudenko, Tamara; Nazarov, Alexey; Ferain, Isabelle; Das, Samaresh; Yu, Ran; Barr 📂 Article 📅 2012 🏛 American Institute of Physics 🌐 English ⚖ 706 KB

Self-consistent calculations of inversion-layer mobility in highly doped silicon-on-insulator metalâoxideâsemiconductor field-effect transistors

Self-consistent calculations of inversion-layer mobility in highly doped silicon-on-insulator metalâoxideâsemiconductor field-effect transistors