𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Bias-Temperature Instabilities in 4H-SiC Metal–Oxide–Semiconductor Capacitors

✍ Scribed by En Xia Zhang; Cher Xuan Zhang; Fleetwod, D.M.; Schrimpf, R.D.; Dhar, S.; Sei-Hyung Ryu; Xiao Shen; Pantelides, S.T.

Book ID
117914310
Publisher
IEEE
Year
2012
Tongue
English
Weight
512 KB
Volume
12
Category
Article
ISSN
1530-4388

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Inversion layer electron transport in 4H
Inversion layer electron transport in 4H-SiC metal-oxide-semiconductor field-effect transistors
✍ Tilak, Vinayak 📂 Article 📅 2009 🏛 John Wiley and Sons 🌐 English ⚖ 491 KB

## Abstract Silicon carbide is the only compound semiconductor with silicon dioxide as its native oxide and can form metal–oxide–semiconductor field‐effect transistors. In this article, we review the inversion layer electron transport properties of 4H‐SiC/SiO~2~. The inversion layer electron transp