✦ LIBER ✦

GaN metal-oxide-semiconductor high-electron-mobility-transistor with atomic layer deposited Al2O3 as gate dielectric

✍ Scribed by Ye, P. D.; Yang, B.; Ng, K. K.; Bude, J.; Wilk, G. D.; Halder, S.; Hwang, J. C. M.

No coin nor oath required. For personal study only.

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