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AlGaN/GaN Metal–Oxide–Semiconductor High-Electron Mobility Transistor With Liquid-Phase-Deposited Barium-Doped as a Gate Dielectric

✍ Scribed by Chih-Chun Hu; Mon-Sen Lin; Tsu-Yi Wu; Adriyanto, F.; Po-Wen Sze; Chang-Luen Wu; Yeong-Her Wang

Book ID: 114620764
Publisher: IEEE
Year: 2012
Tongue: English
Weight: 606 KB
Volume: 59
Category: Article
ISSN: 0018-9383
DOI: 10.1109/ted.2011.2171690

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