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Ge metal oxide semiconductor field effect transistors with optimized Si cap and HfSiO2 high-k metal gate stacks

✍ Scribed by Oh, Jungwoo

Book ID: 122256497
Publisher: Elsevier Science
Year: 2014
Tongue: English
Weight: 1018 KB
Volume: 14
Category: Article
ISSN: 1567-1739
DOI: 10.1016/j.cap.2013.11.039

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