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Ultrascaled InAlN/GaN High Electron Mobility Transistors with Cutoff Frequency of 400 GHz

✍ Scribed by Yue, Yuanzheng; Hu, Zongyang; Guo, Jia; Sensale-Rodriguez, Berardi; Li, Guowang; Wang, Ronghua; Faria, Faiza; Song, Bo; Gao, Xiang; Guo, Shiping; Kosel, Thomas; Snider, Gregory; Fay, Patrick; Jena, Debdeep; Xing, Huili Grace

Book ID: 121871448
Publisher: Institute of Pure and Applied Physics
Year: 2013
Tongue: English
Weight: 753 KB
Volume: 52
Category: Article
ISSN: 0021-4922
DOI: 10.7567/JJAP.52.08JN14

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