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High-Frequency Microwave Noise Characteristics of InAlN/GaN High-Electron Mobility Transistors on Si (111) Substrate

✍ Scribed by Arulkumaran, S.; Ranjan, K.; Ng, G. I.; Kumar, C. M. Manoj; Vicknesh, S.; Dolmanan, S. B.; Tripathy, S.

Book ID: 126655282
Publisher: IEEE
Year: 2014
Tongue: English
Weight: 914 KB
Volume: 35
Category: Article
ISSN: 0741-3106
DOI: 10.1109/LED.2014.2343455

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