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Direct-current and radio-frequency characteristics of passivated AlGaN/GaN/Si high electron mobility transistors

✍ Scribed by Mosbahi, H.; Gassoumi, M.; Saidi, Imen; Mejri, Houcine; Gaquière, C.; Zaidi, M.A.; Maaref, H.

Book ID: 120400331
Publisher: Elsevier Science
Year: 2013
Tongue: English
Weight: 679 KB
Volume: 13
Category: Article
ISSN: 1567-1739
DOI: 10.1016/j.cap.2013.04.003

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