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Piezoeffect and gate current in AlGaN/GaN high electron mobility transistors

✍ Scribed by Gaska, R.; Yang, J. W.; Osinsky, A.; Bykhovski, A. D.; Shur, M. S.

Book ID: 119967714
Publisher: American Institute of Physics
Year: 1997
Tongue: English
Weight: 996 KB
Volume: 71
Category: Article
ISSN: 0003-6951
DOI: 10.1063/1.120477

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