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On the reverse gate leakage current of AlGaN/GaN high electron mobility transistors

✍ Scribed by Yan, Dawei; Lu, Hai; Cao, Dongsheng; Chen, Dunjun; Zhang, Rong; Zheng, Youdou

Book ID: 121796330
Publisher: American Institute of Physics
Year: 2010
Tongue: English
Weight: 678 KB
Volume: 97
Category: Article
ISSN: 0003-6951
DOI: 10.1063/1.3499364

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