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On reverse gate leakage current of GaN high electron mobility transistors on silicon substrate

✍ Scribed by Xia, Ling; Hanson, Allen; Boles, Timothy; Jin, Donghyun

Book ID: 120088131
Publisher: American Institute of Physics
Year: 2013
Tongue: English
Weight: 964 KB
Volume: 102
Category: Article
ISSN: 0003-6951
DOI: 10.1063/1.4798257

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