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Influence of gate-leakage current on drain current collapse of unpassivated GaN/AlGaN/GaN high electron mobility transistors

✍ Scribed by Kordos, P.; Bernat, J.; Marso, M.; Luth, H.; Rampazzo, F.; Tamiazzo, G.; Pierobon, R.; Meneghesso, G.

No coin nor oath required. For personal study only.

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