Ion-Induced Modulation of Channel Currents in AlGaN/GaN High-Electron-Mobility Transistors

✍ Scribed by Neuberger, R. ;M�ller, G. ;Ambacher, O. ;Stutzmann, M.

• Publisher: John Wiley and Sons
• Year: 2001
• Tongue: English
• Weight: 76 KB
• Volume: 183
• Category: Article
• ISSN: 0031-8965
• DOI: 10.1002/1521-396x(200102)183:2<r10::aid-pssa999910>3.0.co;2-i