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Influence of device dimension and gate recess on the characteristics of AlGaN/GaN high electron mobility transistors

✍ Scribed by Jong-Min Lee; Hyung-Sup Yoon; Byoung-Gue Min; Jae-Kyoung Mun; Eunsoo Nam

Book ID: 112145101
Publisher: John Wiley and Sons
Year: 2012
Tongue: English
Weight: 954 KB
Volume: 54
Category: Article
ISSN: 0895-2477
DOI: 10.1002/mop.27036

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