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Correlation of device performance and defects in AlGaN/GaN high-electron mobility transistors

✍ Scribed by A. P. Zhang; L. B. Rowland; E. B. Kaminsky; V. Tilak; J. C. Grande; J. Teetsov; A. Vertiatchikh; L. F. Eastman

Book ID: 107453028
Publisher: Springer US
Year: 2003
Tongue: English
Weight: 978 KB
Volume: 32
Category: Article
ISSN: 0361-5235
DOI: 10.1007/s11664-003-0163-6

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