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Performance of AlGaN/GaN High-Electron Mobility Transistors With AlSiN Passivation

✍ Scribed by Harvard, E.; Brown, R.; Shealy, J.R.

Book ID: 114620238
Publisher: IEEE
Year: 2011
Tongue: English
Weight: 648 KB
Volume: 58
Category: Article
ISSN: 0018-9383
DOI: 10.1109/ted.2010.2084370

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