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Influence of layer structure on performance of AlGaN/GaN high electron mobility transistors before and after passivation

✍ Scribed by J. Bernát; P. Javorka; A. Fox; M. Marso; P. Kordoš

Book ID: 107453242
Publisher: Springer US
Year: 2004
Tongue: English
Weight: 82 KB
Volume: 33
Category: Article
ISSN: 0361-5235
DOI: 10.1007/s11664-004-0198-3

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